Using of the modern semiconductor devices based on the SiC
Loading...
Downloads
3
Date issued
Authors
Drábek, P.
Journal Title
Journal ISSN
Volume Title
Publisher
Žilinská univerzita v Žiline. Elektrotechnická fakulta
Location
Signature
License
Abstract
This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) in
the power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties in
comparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors).
Description
Subject(s)
Citation
Advances in electrical and electronic engineering. 2008, vol. 7, no. 1, 2, p. 106-109.