Using of the modern semiconductor devices based on the SiC
| dc.contributor.author | Drábek, P. | |
| dc.date.accessioned | 2011-02-07T08:32:36Z | |
| dc.date.available | 2011-02-07T08:32:36Z | |
| dc.date.issued | 2008 | |
| dc.description.abstract | This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide) in the power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties in comparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors). | en |
| dc.format.extent | 514473 bytes | cs |
| dc.format.mimetype | application/pdf | cs |
| dc.identifier.citation | Advances in electrical and electronic engineering. 2008, vol. 7, no. 1, 2, p. 106-109. | en |
| dc.identifier.issn | 1336-1376 | |
| dc.identifier.uri | http://hdl.handle.net/10084/83916 | |
| dc.language.iso | en | en |
| dc.publisher | Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
| dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
| dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | |
| dc.rights | © Žilinská univerzita v Žiline. Elektrotechnická fakulta | |
| dc.rights.access | openAccess | |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | |
| dc.title | Using of the modern semiconductor devices based on the SiC | en |
| dc.type | article | en |
| dc.type.status | Peer-reviewed | cs |
| dc.type.version | publishedVersion | cs |