Simulační model pro demonstraci problematiky spínacích jevů MOSFETů ve výkonové elektronice
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Vysoká škola báňská – Technická univerzita Ostrava
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This bachelor thesis focuses on switching phenomenas of MOSFETs during switching in power electronics, their effects on components, and the overall circuit. These phenomenas can lead to improper circuit operation, even to the destruction of individual circuit components. For this reason, this bachelor thesis also includes simulations of several circuits in which the MOSFET or MOSFETs serve as the switch. These simulations will serve as demonstrations of unfavorable states and phenomenas during the switching of MOSFETs. Regarding these simulations, the thesis also covers the conditions for proper MOSFET operation and the conditions to prevent the destruction of the MOSFET transistor itself.
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Drain, gate, gate resistor, MOSFET driving, MOSFET, parasitic capacities, source, transient phenomenas