ZnO nanostructures prepared by RF sputtering

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dc.contributor.authorFlickyngerová, S.
dc.contributor.authorTvarožek, V.
dc.contributor.authorNovotný, I.
dc.contributor.authorŠatka, A.
dc.contributor.authorŠutta, P.
dc.date.accessioned2011-02-02T11:25:12Z
dc.date.available2011-02-02T11:25:12Z
dc.date.issued2006
dc.description.abstractZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummar polycrystalline structure with preffered orientation in <002> direction, resistivity ~ 1 Wcm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au and ZnO were formed by use of RF sputtering.en
dc.format.extent827860 bytescs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationAdvances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 330-333.en
dc.identifier.issn1336-1376
dc.identifier.urihttp://hdl.handle.net/10084/83832
dc.language.isoenen
dc.publisherŽilinská univerzita v Žiline. Elektrotechnická fakultaen
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringen
dc.relation.urihttp://advances.utc.sk/index.php/AEEEen
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)en
dc.rights© Žilinská univerzita v Žiline. Elektrotechnická fakultaen
dc.rights.accessopenAccess
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleZnO nanostructures prepared by RF sputteringen
dc.typearticleen
dc.type.statusPeer-reviewedcs
dc.type.versionpublishedVersioncs

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