Silicon slot waveguide electro-optic Kerr effect modulator
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IEEE
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Abstract
The theoretical background to calculate the effective index tuning using the ultrafast electro-optic Kerr effect and a design of slot waveguide geometry are presented. Analysis of the slot waveguide ring resonator with silicon nanocrystals as the active medium to implement the CMOS compatible electrooptic Kerr effect modulator indicates a modulation bandwidth of 51 GHz, therefore, allowing for 90 Gb/s data rate transmission, and a low energy consumption of 22.99 fJ/bit.
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high speed modulator, electro-optic Kerr effect, integrated optics, silicon nanocrystals, slot waveguide, ring resonator
Citation
IEEE Photonics Technology Letters. 2018, vol. 30, issue 9, p. 873-876.
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Publikační činnost Centra nanotechnologií / Publications of Nanotechnology Centre (9360)
Publikační činnost IT4Innovations / Publications of IT4Innovations (9600)
Články z časopisů s impakt faktorem / Articles from Impact Factor Journals