Silicon slot waveguide electro-optic Kerr effect modulator

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dc.contributor.authorSimili, Deepak V.
dc.contributor.authorČada, Michael
dc.contributor.authorPištora, Jaromír
dc.date.accessioned2018-05-17T07:12:22Z
dc.date.available2018-05-17T07:12:22Z
dc.date.issued2018
dc.description.abstractThe theoretical background to calculate the effective index tuning using the ultrafast electro-optic Kerr effect and a design of slot waveguide geometry are presented. Analysis of the slot waveguide ring resonator with silicon nanocrystals as the active medium to implement the CMOS compatible electrooptic Kerr effect modulator indicates a modulation bandwidth of 51 GHz, therefore, allowing for 90 Gb/s data rate transmission, and a low energy consumption of 22.99 fJ/bit.cs
dc.description.firstpage873cs
dc.description.issue9cs
dc.description.lastpage876cs
dc.description.sourceWeb of Sciencecs
dc.description.volume30cs
dc.identifier.citationIEEE Photonics Technology Letters. 2018, vol. 30, issue 9, p. 873-876.cs
dc.identifier.doi10.1109/LPT.2018.2823080
dc.identifier.issn1041-1135
dc.identifier.issn1941-0174
dc.identifier.urihttp://hdl.handle.net/10084/126999
dc.identifier.wos000430734300009
dc.language.isoencs
dc.publisherIEEEcs
dc.relation.ispartofseriesIEEE Photonics Technology Letterscs
dc.relation.urihttps://doi.org/10.1109/LPT.2018.2823080cs
dc.rightsCopyright © 2018, IEEEcs
dc.subjecthigh speed modulatorcs
dc.subjectelectro-optic Kerr effectcs
dc.subjectintegrated opticscs
dc.subjectsilicon nanocrystalscs
dc.subjectslot waveguidecs
dc.subjectring resonatorcs
dc.titleSilicon slot waveguide electro-optic Kerr effect modulatorcs
dc.typearticlecs
dc.type.statusPeer-reviewedcs

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