Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution
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Vavruňková, Veronika
Müllerová, Jarmila
Šutta, Pavel
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Žilinská univerzita v Žiline. Elektrotechnická fakulta
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Abstract
We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma -
enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples
deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of
several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed
increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.
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Advances in electrical and electronic engineering. 2007, vol. 6, no. 3, p. 108-111.