Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution
| dc.contributor.author | Vavruňková, Veronika | |
| dc.contributor.author | Müllerová, Jarmila | |
| dc.contributor.author | Šutta, Pavel | |
| dc.date.accessioned | 2011-02-03T11:45:26Z | |
| dc.date.available | 2011-02-03T11:45:26Z | |
| dc.date.issued | 2007 | |
| dc.description.abstract | We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution. | en |
| dc.format.extent | 198420 bytes | cs |
| dc.format.mimetype | application/pdf | cs |
| dc.identifier.citation | Advances in electrical and electronic engineering. 2007, vol. 6, no. 3, p. 108-111. | en |
| dc.identifier.issn | 1336-1376 | |
| dc.identifier.uri | http://hdl.handle.net/10084/83877 | |
| dc.language.iso | en | en |
| dc.publisher | Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
| dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
| dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | |
| dc.rights | © Žilinská univerzita v Žiline. Elektrotechnická fakulta | |
| dc.rights.access | openAccess | |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | |
| dc.title | Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution | en |
| dc.type | article | en |
| dc.type.status | Peer-reviewed | cs |
| dc.type.version | publishedVersion | cs |